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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4151 1N4151 SIGNAL DIODE Absolute Maximum Ratings (Ta=25C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 2 ns Time Power Dissipation P 500 mW 3.33mW/C (25C) Forward Current IF 300 mA Junction Temp. Tj -65 to 175 C Storage Temp. Tstg -65 to 175 C Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated 26 MIN Dimensions in millimeters Dimensions (DO-35) DO-35 26 MIN 0.457 DIA. 0.559 4.2 max. 2.0 DIA. max. Electrical Characteristics (Ta=25C) Ratings Breakdown Voltage IR= 5.0uA Peak Forward Surge Current PW= 1sec. Maximum Forward Voltage IF= 50mA Maximum Reverse Current VR= 50V VR= 20V, Tj= 150C Maximum Junction Capacitance VR= 0, f= 1 MHz Max Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Symbol BV IFsurge VF IR Ratings 75 1.0 1.0 Unit V A V uA 0.050 50 Cj 2 trr 2 ns pF RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com |
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